Directeur d’Ecole Doctorale Faculté des Sciences de Gabès, University of Gabes Tunisia
Kamel KHIRIOUNI, a dedicated physicist born on April 8, 1960, in Jandouba, Tunisia, is a seasoned expert in semiconductor and solid-state physics. Married and based in Gabès, Tunisia, he has been a cornerstone of academic excellence at the Faculté des Sciences de Gabès. With a prolific career spanning decades, his work encompasses research, teaching, and administrative leadership, reflecting his commitment to advancing science and education.
Profile
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Education 🎓
- 1998: State Doctorate in Physics of Semiconductors, Faculté des Sciences de Tunis.
- 1989: University Doctorate in Physics of Solids, INSA Toulouse, France.
- 1986: Postgraduate Degree in Physics of Solids, Université Paul Sabatier, Toulouse, France.
- 1985: Fourth-Year University Study in Physics, Faculté des Sciences et Techniques de Monastir, Tunisia.
- Additional Diplomas: Scientific Language (English), Business Management, and Computer Science.
Professional Experience 💼
- 2007–2020: Director of Research Laboratory and University Professor.
- 2004–2007: University Professor.
- 1999–2004: Assistant Professor.
- 1990–1999: Assistant.
- 1989–1990: Teacher.
Contributions include teaching physics across disciplines, authoring eight booklets and two books, developing lab experiences, and supervising numerous theses and master’s projects.
Research Interests 🔬
Kamel KHIRIOUNI’s research focuses on the preparation and characterization of materials, employing techniques like:
- Czochralski and Bridgman elaboration.
- Plasma Enhanced Chemical Vapor Deposition.
- Admittance spectroscopy, photoluminescence, and photocurrent spectroscopy.
- Optical absorption, DLTS, Hall effect, and more.
Awards and Achievements 🏆
- Recognized for co-authoring over 350 scientific publications in peer-reviewed journals.
- Leadership in research as the Director of the Common Services Unit and a driving force behind numerous completed research projects.
Publications Top Notes: 📚
Magnetic and spectroscopic properties of Ni–Zn–Al ferrite spinel: from the nanoscale to microscale†
Ac conductivity and dielectric behavior of a− Si: H/c− Si1− yGey/p− Si thin films synthesized by molecular beam epitaxial method
Structural, optical and electrical properties of barium titanate
Organic FETs using biodegradable almond gum as gate dielectric: A promising way towards green electronics
Structural, dielectric and electrical properties of Sol–gel auto-combustion technic of CuFeCr0.5Ni0.5O4 ferrite
Frequency and temperature-dependence of dielectric permittivity and electric modulus studies of the solid solution Ca 0.85 Er 0.1 Ti 1− x Co 4x/3 O 3 (0≤ x≤ 0.1)
The study of structural, dielectric, impedance and modulus properties of La0· 8Pb0· 2FeO3 doped by 25% Mg into the B-site